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oracle

Senior Power FET Development Engineer

151 Semiconductor Components Industries, LLC
New York, USA
Full-time
Senior
Onsite
Discovered 1 months ago
CommunicationPython

Full Job Posting

Qualifications:

  • BS, MS, or PhD in Electrical Engineering, Physics, Materials Science, or a related technical field.
  • Experience developing semiconductor devices, with emphasis on:
  • Power MOSFETs
  • Trench MOSFETs
  • Super Junction devices
  • Other discrete power technologies
  • Strong understanding of:
  • Semiconductor device physics
  • Device reliability
  • Semiconductor manufacturing processes
  • Experience moving new technologies from development through qualification and volume production.
  • Knowledge of wafer fabrication, wafer probe, electrical characterization, and device testing.
  • Experience with data-driven problem solving and statistical analysis techniques.
  • Ability to independently drive technical projects and influence cross-functional teams.
  • Strong written and verbal communication skills.
  • Experience developing semiconductor devices, with emphasis on: Power MOSFETs Trench MOSFETs Super Junction devices Other discrete power technologies
  • Strong understanding of: Semiconductor device physics Device reliability Semiconductor manufacturing processes
  • DFN
  • TO packages
  • Copper clip packages
  • Power modules

Preferred Skills

  • High-voltage and high-current power device development.
  • 300mm semiconductor manufacturing environments.
  • TCAD, SPICE, electro-thermal, or compact modeling tools.
  • Wafer-level test, WAT, PCM, probe, and final test methodologies.
  • Packaging technologies for discrete power devices, including:
  • DFN
  • TO packages
  • Copper clip packages
  • Power modules
  • AEC-Q101 automotive qualification and reliability testing.
  • SiC and GaN power semiconductor technologies.
  • Statistical analysis tools such as JMP, Python, or MATLAB.
  • Patent development and technology innovation experience.
  • Salary: onsemi is excited to share the base salary range for this position is $147,000 to $250,000 exclusive of fringe benefits or potential bonuses. The final pay rate for the successful candidate will depend on geographic location, skills, education, experience, and/or consideration of internal equity of our current team members. We also offer a competitive benefits package. https://www.onsemi.com/site/pdf/Benefits-Summary-USA.pdf

Responsibilities:

  • As a key contributor to our technology development team, you will:
  • Lead the development of next-generation discrete power MOSFET technologies from concept through qualification and production ramp.
  • Define device architectures and electrical performance targets focused on improving:
  • RDS(on)
  • Switching efficiency
  • Power density
  • Ruggedness and reliability
  • Drive device simulation, modeling, characterization, and silicon validation activities.
  • Collaborate closely with process integration, manufacturing, product engineering, packaging, reliability, and applications teams to deliver innovative power device solutions.
  • Analyze electrical data, yield trends, and reliability results to identify opportunities for performance improvement.
  • Solve challenging device and process integration issues using data-driven methodologies, including DOE, SPC, FMEA, and Six Sigma techniques.
  • Partner with fabrication teams to optimize process windows and ensure robust manufacturability.
  • Support technology roadmaps and evaluate emerging device concepts in power MOSFET, Super Junction, SiC, and GaN technologies.
  • Contribute to patents, invention disclosures, and technical publications that expand onsemi's technology leadership.
  • Mentor engineers, provide technical leadership, and help grow the next generation of power semiconductor innovators.
  • Define device architectures and electrical performance targets focused on improving: RDS(on) Switching efficiency Power density Ruggedness and reliability

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